国家/地区 中国（2）
IPC部 C（2）
IPC大类 C25（2）
IPC小类 C25D（2）
IPC C25D003/56（2）
发明人
公开年
申请年
专利权人 UNIV JIANGXI SCI TECHNOLOGY（2）

Preparing graphene oxide-cobalt nanocrystal-diamond film involves carrying out silicon wafer pretreatment by ultrasonically cleaning silicon wafer in analytical pure methanol, and placing silicon wafer in hydrofluoric acid aqueous solution.

ZHOU S, ZHU X, YAN Q, MA L

Nickel-tungsten-graphene composite plating bath used in engineering applications, comprises nickel sulfate hexahydrate, sodium tungstate dihydrate, trisodium citrate monohydrate, sodium sulfate, ammonium chloride and sodium iodide.

ZHANG X, LI X, CHEN H