国家/地区 中国（3）
IPC部 C（3）
IPC大类 C25（3）
IPC小类 C25D（3）
IPC C25D011/06（2） C25D011/24（2）
发明人 MA M（3）
公开年 2019（2）
申请年 2019（2） 
专利权人 UNIV GUILIN .（2）

Preparation of graphene-based transistor communication materials for electrochemical transistor sensor by determining channel region between source and electrochemical transistor drain, adding graphene oxide solution and electrodepositing.

CHANG G, TAO T, MA M, FAN J, HE Y

Preparing micro-arc oxidation/graphene oxide/silane composite film on aluminum alloy surface comprises e.g. mixing graphene oxide and self-assembly liquid, dispersing, grinding, degreasing, carrying out micro-arc oxidization and drying.

WEN Y, MA M, SHANG W

Preparing micro-arc oxidation/graphene/silane composite film on aluminum alloy surface involves forming graphene oxide by modified hummers method, and then preparing graphene by hydrothermal reduction method, adding organic matter BTESPT.

WEN Y, MA M, SHANG W