国家/地区 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人 LEE C（2）
公开年
申请年
专利权人

Manufacturing aluminum nitride used as packaging substrate of semiconductors, involves heating electrolyte comprising choline chloride, urea, aluminum chloride, boric acid and ascorbic acid, applying operating current to electroplate aluminum on workpiece, and annealing aluminum on the workpiece.

CHUNG C, LEE C, PENG K, KUNZENG P, LEE C Y, ZHONG Q

Apparatus for manufacturing device used for preparing graphene for electronic circuit, comprises graphene structure including metal catalyst layer formed on substrate, protection layer, and graphene layer, and power unit.

LEE J, JUNG Y, KIM Y, LEE C, MOON C, LEE J H, JUNG Y S, KIM Y S, LEE C S, MOON C Y, MUN Z R