国家/地区 日本（2） 美国（2）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 B82Y（4）
IPC B82Y040/00（4）
发明人
公开年 2012（3）
申请年 2012（4）
专利权人

Formation of band-gap in graphene raw material used for e.g. light reception and light-emitting devices, involves forming graphene film on surface having nanosize porous holes active on graphene.

HASUO T, KUBOTA H, FUKUYAMA H, HOMMA Y, SAITO S, MASUDA H

Method of disposing graphene thin film over target receiving substrate involves hetero-epitaxially growing graphene thin film on catalyst thin film containing a metal and disposing graphene thin film and catalyst thin film.

VEERASAMY V S

Object useful as electrode of lithium-ion secondary battery, in electric device e.g. mobile phones, lighting devices and personal computers, and to manufacture graphene, comprises uneven surface and graphene layer over the uneven surface.

OGUNI T, OSADA T, TAKEUCHI T, NOMOTO K, KOKUNI T, NAGATA T

Preparing a multilayer film comprising metal nanoparticles and a graphene-based material using electrophoretic deposition on a substrate, comprises electrophoretically depositing a layer of graphene-based material on the substrate.

CHEN X, NIU Z, BOEY Y C F, MA J