国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C01B031/02（2） C01B031/04（2） C23C016/26（2）
C25D003/12（2） C25D005/02（2）
发明人
公开年 2014（3）
申请年 2013（4）
专利权人

Copper foil used in manufacture of graphene, has preset surface roughness, and contains copper plating layer and/or copper sputter layer.

KOHIKI MICHIYA, SAKAGUCHI KAZUHIKO, KOHIKI M, SAKAGUCHI K, MICHISHITA N

Preparation of graphene crystal domain involves forming copper-nickel double sided substrate, introducing hydrogen, reacting, introducing carbon source, growing graphene crystal domain, introducing argon gas and cooling.

YANG C, WU T, LU G, ZHANG X

Preparation method for metal electrode of graphene conductive film involves patterning graphene film and metal layer are patterned on upper substrate.

JIN H, PENG P, WU W, ZHOU Z

Method for manufacturing electrical conductor, involves depositing boundary cappings on defects of graphene layer to inhibit corrosion of the substrate layer at defects and depositing boundary capping material on substrate layer.

LIU Z, ZHENG M, MARTENS R I, MARTENS R