国家/地区
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B029/02（2）
发明人 DUAN X（2）
公开年
申请年 2014（2）
专利权人 DUAN X（2）

Manufacturing single crystal graphene wire involves using pure single crystal silicon carbide, and then providing obtained single crystal silicon carbide with electron beam bombardment and laser irradiation.

DUAN X

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H