国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B029/40（2）
发明人
公开年 2018（2）
申请年 2018（2）
专利权人

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Preparing graphene chip fly ash comprises washing fly ash is washed by the wet grinding of the vertical wet mill and supergravity washing machine, purifying, recycling, drying, crushing, opening natural gas tank and mixing.

CHENG L, LIU X, YONG X, LIU H