国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/00（2） C30B029/02（2）
发明人
公开年
申请年 2013（3）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（3）

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparation of sulfur-doped graphene by placing graphene in chemical vapor deposition reaction chamber, carrying out inert gas aeration and exhaust treatment, introducing sulfur source, and introducing hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y

Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y