国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/02（2）
发明人 XIE X（2）
公开年
申请年
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（2）

Preparation of double-layer torsion angle graphene monocrystalline wafer, by annealing copper-nickel monocrystalline substrate in chemical vapor deposition furnace under gas atmosphere of argon and hydrogen to improve crystal quality, and growing under atmosphere of argon, hydrogen and methane.

XIE X, YU Q, ZHAO Y, ZHANG X

In-situ growth of graphene-based field effect transistor micro zone heating materials, comprises preparing graphene-based field effect transistor, applying voltage on ends of graphene electrode and allowing the growth of the material layer.

DENG L, HE L, JIANG M, LI L, XIE X, WU T, XIE H, WANG H, CHEN L