国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3） H01（2）
IPC小类 C30B（3）
IPC C30B025/18（2） C30B029/02（2） H01L021/205（2）
发明人 ZHANG J（3）
公开年 2013（3）
申请年 2012（3）
专利权人 UNIV XIDIAN（3）

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D

Direct epitaxial method of graphene by chemical vapor deposition using II-VI semiconductor zinc oxide substrate where graphene-zinc oxide composite is used for piezoelectric device comprises pre-processing substrate and growing graphene.

ZHANG J, HAN D, NING J, HAO Y, CHAI Z, WANG D, YAN Y