国家/地区 美国（3） 中国（2） 欧洲专利局（EPO）（2） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C01（4） C30（4） B82（2）
H01（2）
IPC小类 C01B（4）
IPC C01B032/184（4）
发明人
公开年 2016（2） 2017（2）
申请年 2016（4）
专利权人

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Production of unitary graphene layer or graphene single crystal for use as heat spreader involves preparing graphene oxide gel having graphene oxide molecules dispersed in fluid medium, removing fluid medium, and heat-treating graphene.

ZHAMU A, XIONG W, JANG B Z

Preparation method of graphene nanobelts, involves heat-treating dried linear nano-crystals.

YU G, XU J, ZHANG J, WANG H

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F