国家/地区 日本（2）
IPC部 B（2） C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/184（2）
发明人
公开年
申请年
专利权人

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T