国家/地区 中国（2） 韩国（2）
IPC部 C（3）
IPC大类 C01（3） C30（3）
IPC小类 C01B（3）
IPC C01B032/194（3）
发明人
公开年 2022（3）
申请年 2021（3）
专利权人

Producing transition metal chalcogen compound useful in semiconductor devices comprises forming graphene thin film, forming transition metal chalcogen compound on graphene thin film from transition metal precursor and chalcogen precursor.

HOON L S, HONG B H, KIM J W, CHO S P, BAEKWON P, LEE G S, IL J, LIM E H

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Preparation of new metal and nonmetal materials involves forming metal and non metal macromolecule materials of preset purity and particle size, breaking bonds to form small molecule materials, self-forming using double-forming catalyst, vibrating re-formed materials and recombining molecules.

LIN D