国家/地区 美国（3）
IPC部 C（3）
IPC大类 C01（3） C23（3） C30（3）
B82（2）
IPC小类 C01B（3）
IPC C23C016/26（3）
发明人
公开年 2012（2）
申请年 2012（3）
专利权人

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y