国家/地区 中国（3）
IPC部 C（4）
IPC大类 C30（4）
IPC小类 C30B（4）
IPC C30B025/00（4）
发明人
公开年 2016（4）
申请年 2015（2）  2016（2） 
专利权人

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Preparation of continuous large single crystal graphene by mixing raw materials, and subjecting to rotating device for continuous growth of graphene on surface of substrate.

LIU K, YU D, WANG E, ZHANG Z, XU X

Preparing single-crystal graphene comprises placing copper catalyst into reactor, passing non-oxidizing gas, heating copper catalyst, and introducing non-oxidizing gas into reactor.

LIU J, LUO Y, MA Y, XU J, SUN H, LOU Z