国家/地区 中国（4）
IPC部 C（5）
IPC大类 C30（5）
IPC小类 C30B（5）
IPC C30B025/00（5）
发明人
公开年 2015（5）
申请年 2013（3） 
专利权人

Preparing large single crystals of graphene involves annealing copper substrate in low reducing atmosphere to obtain copper substrate and then treating copper substrate with triazine derivative in steam atmosphere.

LIN L, LIU Z, PENG H, REN H

Two-dimensional carbon-nitrogen single crystal alloy comprises carbon skeleton of graphene and doping nitrogen atom.

CUI P, ZENG Z, ZHANG H, ZHANG Z

Preparation of graphene film comprises providing insulating substrate, placing in growth chamber, heating, introducing gas containing catalytic element, reacting, and introducing carbon source.

DING G, JIANG M, LU G, XIE X, TANG S, WU T, XIE H, ZHANG X, JIANG D, WANG H

Preparation of semiconductor material used for forming semiconductor layer in semiconductor device, involves forming graphene layer on semiconductor, and forming and cleaving metal monolayer and epitaxial layer of gallium material.

BAYRAM C, DIMITRAKOPOULOS C D, FOGEL K E, KIM J, OTT J A, SADANA D K

Iron-based carbide nanocrystals-graphene nanobelt composite material used in e.g. hydrogen evolution catalysis, comprises bottom layer of silicon wafer, graphene nanobelt arrays on silicon wafer, and iron-based carbide nanocrystal.

DONG J, FAN X, GUO X, LIU B, LI C, LIU Q