国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/00（2）
发明人
公开年 2020（2）
申请年
专利权人

Pretreating graphene growth substrate comprises using copper foil or copper-nickel alloy foil as the base, polishing base, placing in tube furnace for annealing, taking annealed substrate of tube furnace, and polishing.

HAO Y, NIU W

Vacuum chamber tunnel furnace and tubular linear gas supply arrangement for production of graphene single crystal film, in which copper-nickel foil moving device moves copper-nickel foil to react with deposition gas to produce graphene film.

WANG Y