国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2） H01（2）
IPC小类 C30B（2）
IPC C30B025/12（2）
发明人 DING T（2）
公开年
申请年 2021（2）
专利权人 HC SEMITEK Z.（2）

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y

Growing deep UV LED epitaxial structure used in optoelectronic manufacturing, involves depositing isolation layer on graphite disc surface, growing epitaxial structure of deep UV LED on isolation layer surface, and adhering residue on surface of isolation layer to disc by using adhesive tape.

MEI J, YIN Y, GONG C, DING T