国家/地区 美国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C30B025/10（3）
发明人
公开年
申请年
专利权人 GEN GRAPHENE.（2）

System for realizing formation of high throughput and high yield graphene for use in applications such as batteries, ultra-capacitors and fuel-cells, has gas distribution subsystem for dispensing annealing gas composition to inner side of processing sub-enclosure.

PHILPOTT R, BARAKET M, SHERRILL V

Apparatus for producing two-dimensional (2D) material e.g., graphene comprises carrier substrate having 2D surface, 2D sheet for growing 2D material, furnace which forms a tubular volume around the carrier substrate and sheet, and heater.

SHERRILL J V, ERICKSON G

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O