国家/地区 世界知识产权组织（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C30B025/20（2）
发明人
公开年
申请年
专利权人

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M