国家/地区
IPC部 C（2） H（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C30B025/20（2）
发明人
公开年
申请年 2021（2）
专利权人

Substrate for forming semiconductor device, comprises graphene layer arranged on silicon surface of silicon carbide crystal substrate, epitaxial growth layer, and graphene layer arranged on silicon surface of epitaxial growth layer.

NORIYUKI M, TAKUJI M, MITSURU M, TAKAYASU O

Preparing gallium nitride homogenous substrate comprises e.g. preparing polycrystalline gallium nitride substrate, coating metal gallium film, ammoniating, amorphizing, transferring, ammonifying, depositing, growing and removing.

TAN X, TAN Q, JIANG B