国家/地区 美国（2） 世界知识产权组织（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B029/40（2）
发明人
公开年 2016（2）
申请年
专利权人

Semiconductor device for e.g. power switching device, has graphene layer that is synthesized without metallic catalyst, and gallium nitride-based layer that is provided over graphene layer.

ROBINSON J A, REDWING J M, SADWICK L P, GAGNON J C

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z