国家/地区
IPC部 B（2）
IPC大类 C30（2） H01（2）
IPC小类 C30B（2）
IPC C30B033/02（2）
发明人
公开年
申请年 2021（2）
专利权人

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Fabrication of graphene used for electrode of e.g. sandwich-style capacitor, involves providing patterned substrate, depositing graphene oxide on patterned substrate, and reducing graphene oxide to graphene.

CHAICHI A, GARTIA M R