国家/地区
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC H01L021/02（2）
发明人
公开年 2012（2）
申请年
专利权人

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of single crystal involves forming graphene layer on portion(s) of amorphous or polycrystalline sample, floating in air within treatment basin, heating and crystallizing.

JOO I L, CHAN Y H, JUNG H K, YONG S Y, YONG H S, KWANG M K