国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人
公开年
申请年 2021（2）
专利权人 UNIV SOUTHERN SCI TECHNOLOGY（2）

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Preparing single crystal graphene film comprises e.g. providing substrate, carbon source and container, providing at least one through hole on container, placing substrate in container, and depositing carbon source.

ZOU D, TIAN Z, ZHANG Z, ZHAO Y, YU D