国家/地区 美国（2）
IPC部 B（2）
IPC大类 C01（2） C23（2） C30（2）
IPC小类 C01B（2）
IPC C23C016/32（2）
发明人
公开年
申请年
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F