国家/地区
IPC部 C（2）
IPC大类 C23（2） C30（2）
IPC小类 C23C（2）
IPC C23C016/56（2）
发明人
公开年 2016（2）
申请年
专利权人

Preparation of two-dimensional tin graphene material involves carrying out epitaxial growth of monolayers or multi-atomic layer of (alpha)-tin crystal thin film on single crystal substrate and electron bombardment using atoms and ions.

LI Y, SONG Y, WANG S, ZHANG Z, ZHANG L

Method for growing two-dimensional crystals e.g. graphene, involves heating crystal-growing furnace to enable reaction gas to react on stacked substrate, and forming two-dimensional crystal on surface of sub-substrates in stacked substrate.

HSIEH Y, HOFMANN M, CHIU Y