国家/地区 美国（2）
IPC部 B（2）
IPC大类 B32（2） C30（2）
IPC小类 B32B（2）
IPC C30B023/02（2）
发明人
公开年
申请年 2009（2）
专利权人

Structure, useful for fabricating electrical devices, comprises layer of graphene supported on a substrate, which is pre-selected to have a specified coefficient of thermal expansion, for inducing controlled stress in graphene layer.

QUITORIANO N J, KAMINS T I, BRATKOVSKI A M

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W