国家/地区 中国（2）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C30B025/08（3）
发明人
公开年 2021（2）
申请年
专利权人

Vapor-deposited graphene layer growth preparation device comprises high-vacuum sealing plug-in valve transversely arranged on upper part of sealed cavity near top, thermal field base fixedly installed at bottom of sealed cavity.

ZHAO B, FU S, ZHANG H

Multi-chamber semiconductor thin film epitaxy device comprises growth chambers and mechanical arm, where growth chambers have graphene and semiconductor material growth chamber, where graphene growth chamber used to grow graphene film.

GUO L, WEI T, RAN J, WANG J

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E