国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3） C23（2）
IPC小类 C30B（3）
IPC C30B025/18（3）
发明人 LI C（3）
公开年 2021（2）
申请年 2021（2） 
专利权人

Preparation of ultrathin beta-radiation source for micro-components, involves using polymethyl methacrylate/graphene film and platinum sheet, and depositing beta-radiation source on graphene using solution of e.g. beta-radiation source.

ZHANG J, LI C, WANG X, XU P, FENG H, CHEN Z, YANG Y, WU W, ZHOU C, LUO T

Single crystal diamond epitaxial growth by iridium-graphene structured buffer layer, comprises preparing layer of iridium-nickel composite patterned transition layer performing vacuum stress relief annealing and chemical vapor deposition.

LI C, XIA T, ZHENG Y, YUAN X, CHEN L, LIU J, WEI J

Fabricating hexagonal boron nitride comprises placing catalytic metal having hexagonal crystal structure and lattice mismatch with hexagonal boron nitride in chamber and growing hexagonal boron nitride on the catalytic metal while supplying nitrogen source and boron source into the chamber.

LEE C, SHIN H, HONG S, MA K, LEE C S, SUK S H, SHIN H J, LI C, SHEN X