国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C30B025/18（3） C23C016/26（2） C30B029/02（2）
发明人 ZHANG X（3）
公开年 2016（2）
申请年
专利权人

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Direct preparation of graphene/metal or alloy composite material comprises e.g. placing metal or alloy in constant temperature heating area of chemical vapor deposition reaction furnace quartz tube and vacuumizing, inletting protective gas.

FU L, GU J, PANG A, ZHANG X

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z