国家/地区 美国（3） 世界知识产权组织（3） 中国（2）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人
公开年 2012（4）
申请年 2011（2）  2012（2） 
专利权人

Controllable layer number graphene thin film, prepared by preparing germanium-silicon substrate, carburizing and heating copper-nickel composite substrate with carbon source gas.

DING G, JIANG M, XIE X, ZHU Y

Copper foil used for manufacturing graphene, has glossiness or more than preset value, and average grain size more than preset value after being heated in atmosphere containing hydrogen and argon at specific conditions.

CHIBA YOSHIHIRO, CHIBA Y, YOSHIHIRO C, CHIBA G

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Producing an array of single-crystal graphene islands, to make e.g. transistor, comprises e.g. providing substrate, cleaning substrate surface, spin-coating poly(methyl methacrylate) layer on the surface, curing, and performing lithography.

YU Q, PEI S