国家/地区 日本（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C014/14（3）
发明人 KIM J（2）
公开年
申请年
专利权人

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Carbon-film laminate used for graphene-based electronic device, has monocrystal substrate, copper single-crystal thin film epitaxially grown on substrate, and graphene formed on copper single-crystal thin film.

HASEGAWA MASATAKA, ISHIHARA MASATOU, KOGA YOSHINORI, KIM JAEHO, TSUGAWA KAZUO, IIJIMA SUMIO, HASEGAWA M, ISHIHARA M, KOGA Y, KIM J, TSUGAWA K, IIJIMA S, YOSHINORI K, HO K J, KAZUO T, SUMIO I, MASATAKA H, MASATOU I, JAEHO K