国家/地区 美国（2）
IPC部 C（2）
IPC大类 C23（2）
IPC小类 C23C（2）
IPC C23C016/26（2）
发明人
公开年
申请年 2014（2）
专利权人

Formation of graphene-boron nitride interface used in e.g. formation of graphene-boron nitride heterostructure, involves exposing ruthenium substrate to ethylene, and sequentially exposing resultant substrate to oxygen and borazine.

SUTTER P W, SUTTER E A

Large-surface-area single-crystal monolayer graphene material for e.g. transparent electrode, has graphene layer arranged on flat board or catalytic layer, where catalytic layer is arranged on crystal plane that is arranged on substrate.

PARK H B, KIM H, YOON H W, PARK S M, LEE M Y, HO B P, HEE W Y, SUN M P, YONG L M, LEE M, PARK H, PARK S, YOON H