国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC
发明人 LI X（3）
公开年 2014（2）
申请年 2014（3）
专利权人

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Preparing silicon carbide nanowhisker comprises uniformly mixing graphene and silicon powder, raising the mixture, sintering the mixture, cooling the sintered mixture and then calcining, and soaking calcined product in hydrofluoric acid.

KONG Q, LI X, CHEN C, LIU Z, CAI R

Gallium nitride crystals preparation involves preparing graphene nanosheet and dispersing nanosheet in solution of N,N-dimethylformamide or N-methyl pyrrolidone to obtain oxidized graphene nanosheet, which is later dispersed in water.

TIAN Y, WU Y, LI X, ZHANG L, DAI Y, SHAO Y, HAO X, HUO Q