国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/00（2） C30B029/02（2）
发明人 LI Y（2） LIANG S（2）
公开年
申请年
专利权人 HARBIN INST TECHNOLOGY（3）

Processing wafer level single crystal graphene heterojunction by direct growth method, comprises e.g. pre-processing the polycrystalline metal foil to obtain single crystal metal foil, using the crystal orientation inducing method to grow hexagonal boron nitride single crystal domain.

LI Y, WU B, LIANG S, LI S, ZHANG X, HU P, ZHANG J

Implementing airflow-free MPCVD single crystal diamond growth using a solid carbon source involves ultrasonic cleaning of diamond seed crystals with acetone, deionized water and absolute ethanol in sequence to obtain seed crystals.

ZHU J, LI Y, DAI B, HAO X, ZHAO J, ZHANG S

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L