国家/地区 中国（3）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC C01B032/184（3）
发明人 AHMED M（2） IACOPI F（2）
公开年
申请年
专利权人 UNIV GRIFFIT.（2） UNIV SYDNEY .（2）

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Formation of graphene for structure formation involves depositing metals on surface of silicon carbide and heating silicon carbide and metals under predetermined conditions.

IACOPI F, AHMED M, CUNNING B V

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z