国家/地区 美国（3） 欧洲专利局（EPO）（2） 日本（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC B82Y040/00（2） C01B031/02（2） C30B029/02（2）
H01L021/02（2） H01L021/20（2）
发明人
公开年 2011（3）
申请年 2009（3）
专利权人

Manufacturing structure comprising semiconductor substrate and modified graphene layer, comprises supplying initial structure comprising standard graphene layer, and hydrogenating initial structure with exposure dosage of hydrogen gas.

CHIANG S, ENRIQUEZ H, OUGHADDOU H, SOUKIASSIAN P, TEJEDA G A, VIZZINI S, TEJEDA GALA A, GALA A T

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Structure, useful for fabricating electrical devices, comprises layer of graphene supported on a substrate, which is pre-selected to have a specified coefficient of thermal expansion, for inducing controlled stress in graphene layer.

QUITORIANO N J, KAMINS T I, BRATKOVSKI A M