国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人 ZHANG Z（2）
公开年 2018（2）
申请年
专利权人 UNIV PEKING（2）

Single crystal gallium nitride film growing involves forming amorphous silicon oxide layer on silicon substrate, transferring single crystal graphene to obtained silicon substrate, and then pretreating single crystal graphene surface.

YANG X, SHEN B, FENG Y, ZHANG Z, LIU K, ZHANG J, XU F, WANG X, TANG N

Continuous preparation of ultra-large single crystal film useful in e.g. graphene film, involves heating single small crystal domain and growing ultra-large single crystal film on surface of high-temperature resistant substrate.

WU M, ZHANG Z, XU X, YU D, WANG E, LIU K