国家/地区
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B023/02（2） C30B029/02（2）
发明人
公开年 2010（2）
申请年 2009（2）
专利权人

Method for epitaxially growing carbon semiconductor nanometer film material graphene on silicon carbide (SiC) substrate, involves annealing and removing default surface formed in growing process of graphene.

WANG W, CHEN X, YANG R, HUANG Q

Manufacture of graphene/silicon carbide composite material for electronic component e.g. semiconductor, involves removing oxide film from surface of silicon carbide single crystal substrate, exposing and heating.

KUSUNOKI M, NORIMATSU W