国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B029/02（3）
发明人 CHEN X（3）
公开年 2015（2）
申请年 2015（3）
专利权人 UNIV SHANDON.（2）

Preparation of large size single crystal graphene, involves using making copper foil into cavity structure, heat-treating copper cavity with hydrocarbon as carbon source and growing large size single crystal graphene.

BAI X, CAO S, CHEN X, GUO L, WANG L

In-situ atmosphere effect epitaxial growing of graphene on surface of large-diameter hydrogen/hydrogen-silicon carbide substrate used for electronics field by heating substrate with silicon or silicon carbide, decomposing and etching.

CHEN X, SUN L, XU X, ZHAO X

Device for preparing large-size high-quality single crystal graphene on silicon carbide substrate, has intermediate frequency coil located for induction heating of graphite heating element in graphite crucible.

CHEN X, CHENG X, SUN L, YANG Z, XU S, YU F, ZHAO X