国家/地区 中国（3） 台湾（3）
IPC部 C（6）
IPC大类 C30（6）
IPC小类 C30B（6）
IPC C01B031/04（3） C30B023/08（3） C30B025/18（3）
C01B032/184（2） C30B029/02（2）
发明人 HUANG K（3） KOU C（3） CHANG C（2）
CHANG C C（2） HUANG K P（2） KOU C S（2）
公开年 2017（6）
申请年 2015（6）
专利权人 IND TECHNOLO.（3）

Dry cleaning of copper substrate for preparing chemical vapor deposited graphene, involves subjecting copper substrate to aerobic atmosphere for oxidation to form oxide layer and removing oxide layer from surface of substrate.

ZHANG Y, YU G, GE X, ZHANG H, CHEN Z, SUI Y, DENG R

Preparing graphene mercury cadmium telluride composite film material comprises preparing graphene composite film, then transferring graphene composite film in three stages.

LI B

Production of graphene used in e.g. semiconductor surfaces by depositing carbon on substrate, involves providing substrate of wafer having crystalline layer of germanium with crystallographic orientation in reactor, and evoking gas flow.

PASTERNAK I, STRUPINSKI W

Manufacture of graphene for graphene material, involves purging hydrocarbon gas and auxiliary gas into variable pressure coupled plasma apparatus, applying intermediate frequency electromagnetic wave and dissolving hydrocarbon gas.

HUANG K, ZHANG Z, KOU C, HUANG K P, CHANG C C, KOU C S

Graphene flower and composite material which includes introducing a carbon hydrogen gas and a assistance gas into a transformer coupled plasma equipment.

HUANG K, CHANG C, KOU C, HUANG K P, CHANG C C, KOU C S

Method for manufacturing graphene flower which includes introducing a carbon hydrogen gas.

HUANG K, CHANG C, KOU C