国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2） H01（2）
IPC小类 C30B（2）
IPC C30B025/18（2）
发明人
公开年 2017（2）
申请年
专利权人

Graphene-based LED epitaxial growth method, involves depositing silicon-doped n-type gallium nitride layer, active layer, p-type aluminum gallium nitride layer and magnesium-doped gallium nitride layer on substrate, and cooling.

XU P

Manufacturing method of semiconductor device, by forming graphene layer on first substrate, transferring graphene layer from first substrate to second substrate, and forming single-crystalline film on graphene layer.

KIM J