国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC
发明人 WU H（2）
公开年 2022（2）
申请年 2022（2）
专利权人

Crystal cooling device for semiconductor device, has graphite sleeve whose inner wall is provided with graphene coating, and argon system downwards conveying argon gas for cooling along outer wall of water cooling sleeve.

SHI B, WANG J, ZHONG Y, WU H

Preparing diamond-based gallium nitride epitaxial substrate structure, involves preparing aluminum nitride nucleating layer on diamond substrate, growing graphene layer on surface of copper foil, and transferring onto aluminum nitride nucleation layer.

HAO Y, MA P, WANG D, JIA Y, ZHANG J, WU H, NING J