国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/14（2） C30B029/02（2）
发明人 WANG C（2）
公开年 2013（2）
申请年 2013（2）
专利权人 UNIV NANCHAN.（2）

Single-crystal graphene preparation device has heating device that is located in cavity whose two sides are provided with air inlet and air outlet connected with one end of exhaust pipe whose other end is connected with vacuum pump.

WANG C, WANG L

Preparing large size single crystal graphene comprises depositing organic gas, hydrogen gas and inert gas on metal surface of a large size single crystal graphene under a specific pressure in a flow field.

WANG C, WANG L