国家/地区 中国（2）
IPC部 C（2）
IPC大类 C01（2） C23（2） C30（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 ZHANG Y（2）
公开年
申请年
专利权人

Selection of qualified region of chemical vapor deposited graphene film during fabrication of microelectronics, involves heating chemical vapor deposited graphene film formed on metal substrate using reaction gas, and removing defect.

CHEN Z, LI X, SUI Y, WANG B, ZHANG H, ZHANG Y, YU G

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y