国家/地区 中国（2）
IPC部 C（2）
IPC大类 C30（2）
IPC小类 C30B（2）
IPC C30B025/00（2）
发明人
公开年
申请年 2018（2）
专利权人

Vacuum chamber tunnel furnace and tubular linear gas supply arrangement for production of graphene single crystal film, in which copper-nickel foil moving device moves copper-nickel foil to react with deposition gas to produce graphene film.

WANG Y

Method for rapidly preparing large-sized single crystal graphene, involves introducing pre-configured standard mixed gas into chemical vapor deposition system, carrying out chemical vapor deposition on surface of copper foil.

WANG S, GUO W, CHI K