国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3） H01（3） B32（2）
B82（2） C01（2）
IPC小类 C30B（3）
IPC C30B029/02（3）
发明人
公开年
申请年 2012（3）
专利权人

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Gallium nitride-based substrate, epitaxial graphene direct chemical vapor deposition growth comprises using III-V group compound semiconductor gallium nitride as substrate, pre-processing, and directly growing graphene.

CHAI Z, ZHANG J, HAN D, HAO Y, YAN Y, NING J, WANG D

Making graphene on diamond substrate, comprises applying metal layer to crystallographic face of diamond substrate, and heating diamond substrate under vacuum to convert portion of diamond substrate at crystallographic face into graphene.

SUNG C, SONG J