国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C30（3） C23（2）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 LEI T（3）
公开年 2012（3）
申请年 2012（3） 
专利权人 UNIV XIDIAN（3）

Preparation of structured graphene at 3C-silicon carbide substrate for preparing microelectronic device, by placing washed silicon substrate in chemical vapor deposition system, vacuumizing, heating, introducing propane, and carbonizing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG C, ZHANG F

Preparation of large-area graphene used for sealing gas or liquid, by vacuumizing cleaned silicon substrate in chemical vapor deposition system in presence of hydrogen, carbonizing, introducing propane to form carbide layer, and heating.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y