国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3） C30（3）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人
公开年 2009（3）
申请年 2009（2） 
专利权人

Epitaxial growth of graphene on silicon surface of silicon carbide by hydrogen etching silicon surface to eliminate surface scratch and form regular step-like strips, removing oxide from surface, and heating surface in presence of argon gas.

GUO H, TANG X, WANG D, WANG Y, ZHANG Y

Making intercalation electrode for electrochemical cell, involves forming graphene planes perpendicular to a current collector substrate and coextensive with electrode surface region by chemical vapor deposition using carbon gas composition.

LEV L C, SACHDEV A K, VERBRUGGE M W, XIAO X, XIAO Y, SHAW X

Single-crystal graphene sheet, useful in a transparent electrode in electrical devices or electromagnetic devices including display devices and solar cells, comprises a polycyclic aromatic molecule and specified layers.

CHOI J, HAN J, SHIN H, YOON S, CHOI J Y, SHIN H J, IN Z, HAN J Y, YOON S M